ZTX450

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt ZTX450 ZTX451 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible ZTX450 ZTX451 60 80 45 60 5 2 1 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL ZTX450 ZTX451 UNIT MIN. MAX. MIN. MAX. Collector-Base V(BR)CBO 60 80 V Breakdown Voltage Collector-Emitter VCEO(sus) 45 60 V Sustaining Voltage Emitter-Base V(BR)EBO 5 5 V Breakdown Voltage Collector Cut-Off ICBO Current 0.1 µA 0.1 µA Emitter Cut-Off IEBO Current 0.1 0.1 µA Collector-Emitter VCE(sat) Saturation Voltage 0.25 0.35 V Base-Emitter VBE(sat) 1.1 1.1 V Saturation Voltage Static Forward hFE Current Transfer Ratio 100 300 50 150 15 10 Transition Frequency fT 150 150 MHz Output Capacitance Cobo 15 15 pF CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=45V VCB=60V VEB=4V IC=150mA, IB=15mA* IC=150mA, IB=15mA* IC=150mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz 3-175 VCE(sat) - (Volts) ZTX450 ZTX451 TYPICAL CHARACTERISTICS 0.4 0.3 IC/IB=10 0.2 ZTX451 0.1 ZTX450 0 0.001 0.01 0.1 1 IC - Collector Current (Amps) ...