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ZTX458 Dataheets PDF



Part Number ZTX458
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
Datasheet ZTX458 DatasheetZTX458 Datasheet (PDF)

NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 – MARCH 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt ZTX458 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 100 100 15 50 5 MIN. SYMBOL VCBO .

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NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 – MARCH 1994 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt ZTX458 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 100 100 15 50 5 MIN. SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. E-Line TO92 Compatible VALUE 400 400 5 300 1 -55 to +200 UNIT V V V 100 100 100 0.2 0.5 0.9 0.9 300 MHz pF nA nA nA V V V V CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=320V VCE=320V VEB=4V IC=20mA, IB=2mA IC=50mA, IB=6mA IC=50mA, IB=5mA IC=50mA, VCE=10V IC=1mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz UNIT V V V mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Breakdown Voltage 400 400 5 3-182 ZTX458 TYPICAL CHARACTERISTICS IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25°C -55°C +25°C +100°C +175°C 1.6 IC/IB=10 1.6 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 VCE(sat) - (Volts) 1.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100°C +25°C -55°C VCE=10V 300 1.6 1.4 -55°C +25°C +100°C +175°C IC/IB=10 VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 200 100 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 1.0 -55°C +25°C +100°C +175°C VBE(sat) v IC Single Pulse Test at Tamb=25°C VCE=10V 1.6 1.4 IC - Collector Current (Amps) VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.01 0.001 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-183 .


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