ZTX541

PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 – MARCH 94 ZTX541 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -100 -100 -5 -100 300 -55 to +175 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. TYP. -100 -100 -5 -0.5 -0.5 -10 -0.5 -1.0 30 80 10 MHz pF MAX. UNIT V V V µA µA µA CONDITIONS. IC=-100µ A IC=-10µ A IE=-100µ A VCB=-80V VCE=-80V, RBE=50KΩ VCE=-80V, RBE=50KΩ IC=-2mA, IB=-0.1mA IC=-2mA, IB=-0.1mA IC=-2mA, VCE=-1V IC=-5mA, VCE=-5V f=60MHz VCB=-6V, f=1MHz Emitter Cut-Off Current ICER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-189 ZTX541 TYPICAL CHARACTERISTICS 0.16 0.14 1.2 1.1 VCE(sat) - Volts 0.12 0.10 0.08 0.06 0.04 0.02 10µA 100µA 1mA 10mA 100mA VCE(sat) - Volts 1.0 0.9 0.8 0.7 0.6 0.5 10µA 100µA 1mA 10mA 100mA IC IC VCE(sat) V IC VBE(sat) V IC 3-190 ...