ZTX549A

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt ZTX549 ZTX549A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb=25°C derate above 25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage ZTX549A Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio ZTX549 ZTX549A VBE(sat) VBE(on) hFE 70 80 40 100 150 -0.9 -0.85 200 130 80 160 200 3-191 300 500 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -0.25 -0.50 MIN. -35 -30 -5 -0.1 -10 -0.1 -0.50 -0.75 -0.30 -1.25 -1 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. -35 -30 -5 -2 -1 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W mW/ °C °C -55 to +200 UNIT V V V µA µA µA ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). CONDITIONS. IC=-100µA IC=-10mA IE=-100µA VCB=-30V VCB=-30V, Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-100mA, IB=-1mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-500mA, VCE=-2V* IC=-500mA, VCE=-2V* V V V V V *Measured under pulsed conditions. Pulse width=300µs. Duty cycl...