ZTX557

PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSUE 1 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt ZTX556 ZTX557 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX556 -200 -200 -5 -1 -0.5 1.0 E-Line TO92 Compatible ZTX557 -300 -300 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT 50 50 75 ZTX556 ZTX557 UNIT CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-160V VCB=-200V VEB=-4V IC=-50mA, IB=-5mA* IC=-50mA, IB=-5mA* IC=-50mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-50mA, VCE=-10V* MHz IC=-50mA, VCE=-10V f=100MHz MIN. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio Transition Frequency -200 -200 -5 -0.1 -0.1 -0.3 -1 -1 300 50 50 75 MAX MIN. -300 -300 -5 -0.1 -0.1 -0.3 -1 -1 300 MAX V V V µA µA µA V V V 3-200 ZTX556 ZTX557 TYPICAL CHARACTERISTICS tf ts µs µs -0.8 IB1=IB2=IC/10 tr µs 2.0 4 16 14 VCE(sat) - (Volts) IC/IB=10 -0.6 3 12 10 ts tf tr...