ZTX650

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ZTX650 ZTX651 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX651 MAX. MIN. TYP. 80 60 5 0.1 10 IEBO VCE(sat) VBE(sat) VBE(on) 0.12 0.23 0.9 0.8 0.1 0.3 0.5 1.25 1 0.12 0.23 0.9 0.8 0.1 10 0.1 0.3 0.5 1.25 1 MAX. ZTX650 60 45 5 6 2 1 5.7 E-Line TO92 Compatible ZTX651 80 60 UNIT V V V A A W mW/°C °C Operating and Storage Temperature Range ZTX650 MIN. TYP. 60 45 5 -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL UNIT CONDITIONS. V V V µA µA µA µA µA Collector-Base V(BR)CBO Breakdown Voltage Collector-Emitter V(BR)CEO Breakdown Voltage Emitter-Base V(BR)EBO Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage ICBO IC=100µA IC=10mA* IE=100µA VCB=45V VCB=60V VCB=45V,Tamb=100°C VCB=60V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* V V V V 3-219 ZTX650 ZTX651 PARAMETER SYMBOL ZTX650 MIN. TYP. Transition Frequency Switching Times fT ton toff Output Capacitance Cobo 140 175 45 800 30 ZTX651 MAX. MIN. TYP. 140 175 45 800 30 M...