ZTX652

ZTX652 Not Recommended for New Design Please Use ZTX653 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ZTX652 ZTX653 C B E ABSOLUTE MAXIMUM RATINGS. E-Line TO92 Compatible PARAMETER SYMBOL ZTX652 ZTX653 UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C VCBO VCEO VEBO ICM IC Ptot 100 120 80 100 5 6 2 1 5.7 V V V A A W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER ZTX652 ZTX653 SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current V(BR)CBO 100 V(BR)CEO 80 V(BR)EBO 5 ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage IEBO VCE(sat) VBE(sat) VBE(on) 120 100 5 0.1 10 0.1 0.13 0.3 0.23 0.5 0.9 1.25 0.8 1 V V V µA 0.1 µA µA 10 µA 0.1 µA 0.13 0.3 V 0.23 0.5 V 0.9 1.25 V 0.8 1 V IC=100µA IC=10mA* IE=100µA VCB=80V VCB=100V VCB=80V,Tamb=100°C VCB=100V,Tamb=100°C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* 3-222 ZTX652 Not Recommended for New Design Please Use ZTX653 ZTX652 ZTX653 ELECTRICAL CHARACTERI...