ZTX655

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ZTX654 ZTX655 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX654 125 125 5 2 1 1 E-Line TO92 Compatible ZTX655 150 150 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 50 50 20 30 20 3-225 ZTX654 ZTX655 MIN. 125 125 5 100 100 0.5 0.5 1.1 1.0 50 50 20 30 20 MHz pF MAX. MIN. 150 150 5 100 100 0.5 0.5 1.1 1.0 MAX. UNIT V V V nA nA nA V V V V CONDITIONS. IC=100µ A, IE=0 IC=10mA, IB=0* IE=100µ A, IC=0 VCB=100V, IE=0 VCB=125V, IE=0 VEB=3V, IC=0 IC=500mA, IB=50mA* IC=1A, IB=200mA* IC=500mA, IB=50mA* IC=500mA, VCE=5V* IC=10mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz ZTX654 ZTX655 TYPICAL CHARACTERIS...