ZTX658

NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 1 – APRIL 94 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt APPLICATIONS * Telephone dialler circuits ZTX658 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 400 400 5 1 500 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A mA W mW/ °C °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SYMBOL MIN. V(BR)CBO V(BR)CEO) V(BR)EBO ICBO ICBO 400 400 5 100 100 100 0.3 0.25 0.5 0.9 0.9 50 50 40 3-229 TYP. MAX. UNIT V V V nA nA nA V V V V V CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=320V VCE=320V VEB=4V IC=20mA, IB=1mA IC=50mA, IB=5mA* IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE=5V* IC=1mA, VCE=5V* IC=100mA, VCE=5V* IC=200mA, VCE=10V* Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) Static Forward Current hFE Transfer Ratio ZTX658 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. 50 10 130 3300 TYP. MAX. UNIT MHz pF...