Document
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 APRIl 94 FEATURES * 120 Volt VCEO * Gain of 400 at IC=200mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Relay / solenoid driver * Battery powered circuits * Motor drivers
ZTX694B
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 120 120 5 1 0.5 1.5 1 5.7
E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C
Operating and Storage Temperature Range
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 400 150 3-244 MIN. 120 120 5 0.1 0.1 0.25 0.5 0.9 0.9 TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=100V VEB=4V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V*
V V V V
ZTX694B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL fT Cibo Cobo ton toff MIN. 130 200 9 80 2900 TYP. MAX. UNIT MHz pF pF ns ns CONDITIONS. IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT °C/W °C/W °C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t1
D=t1/tP tP
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5 0
per
at u re
D=0.2 D=0.1 Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0 0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-245
ZTX694B
TYPICAL CHARACTERISTICS
IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25°C 0.8
-55°C +25°C +100°C +175°C
0.8
IC/IB=100
VCE(sat) - (Volts)
0.6
VCE(sat) - (Volts)
0.6
0.4
0.4
0.2
0.2
0 0.01 0.1 1 10
0
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
hFE - Normalised Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0
+100°C +25°C -55°C
VCE=2V 1.5K 1.6
hFE - Typical Gain
VBE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2
-55°C +25°C +100°C +175°C
IC/IB=100
1K
500
0.01
0.1
1
10 0 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
1
-55°C +25°C +100°C +175°C
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
1.6 1.4
IC - Collector Current (Amps)
VCE=2V
VBE - (Volts)
0.1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10
0.01
0.001 1 10 100 1000
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-246
.