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ZTX694B Dataheets PDF



Part Number ZTX694B
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Datasheet ZTX694B DatasheetZTX694B Datasheet (PDF)

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 – APRIl 94 FEATURES * 120 Volt VCEO * Gain of 400 at IC=200mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Relay / solenoid driver * Battery powered circuits * Motor drivers ZTX694B C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation Tamb=25°C derate abov.

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 – APRIl 94 FEATURES * 120 Volt VCEO * Gain of 400 at IC=200mA * Very low saturation voltage APPLICATIONS * Darlington replacement * Relay / solenoid driver * Battery powered circuits * Motor drivers ZTX694B C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 120 120 5 1 0.5 1.5 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C Operating and Storage Temperature Range -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 400 150 3-244 MIN. 120 120 5 0.1 0.1 0.25 0.5 0.9 0.9 TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=100V VEB=4V IC=100mA, IB=0.5mA* IC=400mA, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* V V V V ZTX694B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL fT Cibo Cobo ton toff MIN. 130 200 9 80 2900 TYP. MAX. UNIT MHz pF pF ns ns CONDITIONS. IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB!=10mA IB2=10mA, VCC=50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2† Rth(j-case) MAX. 175 116 70 UNIT °C/W °C/W °C/W † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (°C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-245 ZTX694B TYPICAL CHARACTERISTICS IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25°C 0.8 -55°C +25°C +100°C +175°C 0.8 IC/IB=100 VCE(sat) - (Volts) 0.6 VCE(sat) - (Volts) 0.6 0.4 0.4 0.2 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 +100°C +25°C -55°C VCE=2V 1.5K 1.6 hFE - Typical Gain VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55°C +25°C +100°C +175°C IC/IB=100 1K 500 0.01 0.1 1 10 0 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 1 -55°C +25°C +100°C +175°C VBE(sat) v IC Single Pulse Test at Tamb=25°C 1.6 1.4 IC - Collector Current (Amps) VCE=2V VBE - (Volts) 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 0.01 0.001 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-246 .


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