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ZTX712

Zetex Semiconductors

PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – MAY 94 FEATURES * 60 Volt VCEO * 0.8 Amp continuous curr...


Zetex Semiconductors

ZTX712

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PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – MAY 94 FEATURES * 60 Volt VCEO * 0.8 Amp continuous current * Gain of 10K at IC=0.5 Amp APPLICATIONS * Lamp, solenoid and relay drivers ZTX712 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C derate above 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -80 -60 -10 -2 -800 1 5.7 E-Line TO92 Compatible UNIT V V V A mA W mW/ °C °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO VCEO(SUS) V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE 5K 10K MIN. -80 -60 -10 -100 -100 -1.25 -1.8 MAX. UNIT V V V nA nA V V CONDITIONS. IC=-10µ A IC=-10mA* IE=-10µ A VCB=-60V, IE=0 VEB=-8V, IC=0 IC=-800mA, IB=-8mA* IC=-800mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-500mA, VCE=-5V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-253 ...




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