ZTX752

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ZTX752 ZTX753 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX752 -100 -80 -5 -6 -2 1 5.7 E-Line TO92 Compatible ZTX753 -120 -100 UNIT V V V A A W mW/°C °C Operating and Storage Temperature Range -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current ZTX752 ZTX753 SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO ICBO -100 -80 -5 -0.1 -10 IEBO -0.1 -0.17 -0.3 -0.30 -0.5 -0.9 -0.8 -1.25 -1 -120 -100 -5 V V V µA µA µA µA µA IC=-100µA IC=-10mA* IE=-100µA VCB=-80V VCB=-100V VCB=-80V,Tamb=100°C VCB=-100V,Tamb=100°C VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* -0.1 -10 -0.1 -0.17 -0.3 -0.30 -0.5 -0.9 -0.8 Emitter Cut-Off Current Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage Base-Emitter Turn-On Voltage VBE(on) V V -1.25 V -1 V 3-260 ZTX752 ZTX753 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL ZTX752 MIN. TYP. 100 140 40 600 30 ZTX753...