PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 APRIL 94 FEATURES * 40 Volt VCEO * Gain of 200 at IC=1 Am...
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN
TRANSISTOR
ISSUE 2 APRIL 94 FEATURES * 40 Volt VCEO * Gain of 200 at IC=1 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren driver * Battery powered circuits * Motor drivers
ZTX790A
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -50 -40 -5 -6 -2 1.5 1 5.7
E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C
Operating and Storage Temperature Range
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 300 250 200 150 3-279 -0.75 800 MIN. -50 -40 -5 -0.1 -0.1 -0.25 -0.45 -0.75 -1.0 TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-30V VEB=-4V IC=-500mA, IB=-5mA* IC=-1A, IB=-10mA* IC=-2A, IB=-50mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-2V...