ZTX795A

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 – APRIL 94 FEATURES * 140 Volt VCEO * Gain of 250 at IC=0.2 Amps * Very low saturation voltage ZTX795A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -140 -140 -5 -1 -0.5 1.5 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C Operating and Storage Temperature Range -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 300 250 100 3-285 -0.75 800 MIN. -140 -140 -5 -0.1 -0.1 -0.3 -0.3 -0.25 -0.95 TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-100V VEB=-4V IC=-100mA, IB=-1mA* IC=-200mA, IB=-5mA* IC=-500mA, IB=-50mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-2V* IC=-10mA, VCE=-2V* IC=-200mA, VCE=-2V* IC=-300mA, VCE=-2V* V V V V V ZTX795A...