ZTX968

PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 – JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * High gain * Spice model available ZTX968 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -15 -12 -6 -20 -4.5 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -50 -100 -220 -930 -830 MIN. -15 -12 -6 TYP. -28 -20 -8 -50 -1 -10 -100 -150 -300 -1050 -1000 MAX. UNIT V V V nA nA mV mV mV mV mV CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-12V VCB=-12V, Tamb=100°C VEB=-6V IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-5A, IB=-200mA* IC=-5A, IB=-200mA* IC=-5A, VCE=-1V* µA VBE(sat) VBE(on) 3-333 ZTX968 ELECTRICAL CHARA...