SOT323 SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES
ISSUE 1 - NOVEMBER 1998 . 7
ZUMD70-04 ZUMD70-05
3 2
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1
SER...
SOT323 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 1 - NOVEMBER 1998 . 7
ZUMD70-04 ZUMD70-05
3 2
! !
1
SERIES PAIR Device Type: ZUMD70-04 Partmarking Detail: D94
COMMON CATHODE Device Type: ZUMD70-05 Partmarking Detail: D95
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL P tot T j :T stg VALUE 330 -55 to +150 UNIT mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Breakdown Voltage Reverse Leakage Current Forward Voltage Forward Current Capacitance Effective Minority Lifetime (1) (1) Sample Test SYMBOL V BR IR VF IF CT τ 15 2.0 100 MIN. 70 200 410 MAX. UNIT V nA mV mA pF ps CONDITIONS. I R =10 µ A V R=50V I F =1mA V F =1V f=1MHz, V R=0 f=54MHz, I pk= 20mA (Krakauer Test Method)
For typical characteristics graphs see ZC2800E datasheet.
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