ZUMT619

Super323™ SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * LCD backlighting inverter circuits * Boost functions in DC-DC converters ZUMT619 DEVICE TYPE ZUMT619 COMPLEMENT ZUMT720 PARTMARKING T63 RCE(sat) 160mΩ at 1A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb =25°C SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE 50 50 5 2 1.0 200 385 † 500 ‡ -55 to +150 UNIT V V V A A mA mW Operating and Storage Temperature Tj:Tstg Range °C † Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT619 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 24 60 120 160 940 850 200 300 200 75 20 420 450 350 130 60 215 615 150 425 MHz pF ns ns M...