ZUMT717

Super323™ SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES ZUMT717 * * * * * * 500mW POWER DISSIPATION IC CONT 1.5A 3A Peak Pulse Current Excellent HFE Characteristics Up To 3A (pulsed) Extremely Low Saturation Voltage Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Negative boost functions in DC-DC converters * Supply line switching in mobile phones and pagers * Motor drivers in camcorders and mini disk players DEVICE TYPE ZUMT717 COMPLEMENT ZUMT617 PARTMARKING T71 RCE(sat) 150mΩ at 1.25A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb =25°C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE -12 -12 -5 -3 -1.25 -200 385 † 500 ‡ -55 to +150 UNIT V V V A A mA mW Operating and Storage Temperature Tj:Tstg Range °C † Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO...