Document
Super323 SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR
ISSUE 2 - JUNE 2000 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 3A Peak Pulse Current * Excellent HFE Characteristics Up To 3A (pulsed) * Extremely Low Saturation Voltage * Extremely Low Equivalent On Resistance; RCE(sat) APPLICATIONS * Switch functions in LED displays and Satellite receivers * Negative boost functions in DC-DC converters
ZUMT718
DEVICE TYPE ZUMT718
COMPLEMENT ZUMT618
PARTMARKING T72
200m at 1A
RCE(sat)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current** Continuous Collector Current Base Current Power Dissipation at Tamb =25°C* SYMBOL VCBO VCEO VEBO ICM IC IB Ptot VALUE -20 -20 -5 -3 -1 -200 385 † 500 ‡ -55 to +150 UNIT V V V A A mA mW
Operating and Storage Temperature Range
Tj:Tstg
°C
† Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
37
ZUMT718
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) -33.5 -80 -130 -180 -970 -850 300 300 200 100 20 490 450 315 160 75 210 11 60 135 MHz pF ns ns MIN. -20 -20 -5 -10 -10 -10 -45 -110 -175 -250 -1100 -1100 TYP. MAX. UNIT V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC= -100A IC= -10mA* IE= -100A VCB=-15V VEB=-4V VCES=-15V IC= -0.1A, IB= -10mA* IC= -0.25A, IB= -10mA* IC= -0.5A, IB=-20 mA* IC= -1A, IB= -100mA* IC= -1A, IB= -100mA* IC= -1A, VCE= 2V* IC= -10mA, VCE=-2V* IC= -0.1A, VCE= -2V* IC= -0.5A, VCE=-2V* IC= -1A, VCE= -2V* IC= -1.5A, VCE= -2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC= -10V, IC= -1A IB1=IB2=-100mA
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT Cobo t(on) t(off)
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
38
ZUMT718
TYPICAL CHARACTERISTICS
0.6 0.6
+25°C IC/IB=50
VCE(sat) - (V)
VCE(sat) - (V)
0.4
IC/IB=10 IC/IB=50 IC/IB=100
0.4
-55°C +25°C +100°C +150°C
0.2
0.2
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
IC - Collector Current (A) VCE(sat) v IC
IC - Collector Current (A) VCE(sat) v IC
VCE=2V
800
1.2
IC/IB=10
hFE - Typical Gain
+100°C
+25°C
VBE(sat) - (V)
600
0.9
400
0.6
-55°C +25°C +100°C +150°C
200
-55°C
0.3
0 1m 10m 100m 1 10
0
1m
10m
100m
1
10
IC - Collector Current (A) hFE v IC
IC - Collector Current (A) VBE(sat) v IC
10 1.0 0.8 0.6 0.4 0.2 0 1m 10m 100m 1 10
-55°C +25°C +100°C +150°C
IC - Collecto.