SOT323 NPN SILICON PLANAR VHF TRANSISTOR
ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL — T3 7
ZUMTS20
ABSOLUTE MAXIMUM RA...
SOT323
NPN SILICON PLANAR VHF
TRANSISTOR
ISSUE 1 – DECEMBER 1998 PARTMARKING DETAIL — T3 7
ZUMTS20
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg VALUE 30 20 4 25 25 330 -55 to +150 UNIT V V V mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector Cut-Off Current SYMBOL I CBO MIN. TYP. MAX. 100 10 UNIT nA µA CONDITIONS. V CB=20V, I E=0 V CB=20V, I E=0, T amb=100°C I C=7mA, V CE=10V* I C=7mA, V CE=10V*
Base-Emitter Voltage Static Forward Current Transfer Ratio Transition Frequency
V BE h FE 40
740 85
900
mV
fT
275
450
MHz
I C=5mA, V CE=10V f=100MHz I C=1mA, V CE=10V f=1MHz I E=I e=0, V CB=10V f=1MHz
Feedback Capacitance
C re
0.35
0.40
pF
Collector Capacitance
C TC
0.8
pF
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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