ZVNL120A

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=10Ω * Low threshold APPLICATIONS * Telephone handsets ZVNL120A D G S E-Line TO92 Compatible SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 180 2 ± 20 700 -55 to +150 UNIT V mA A V mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. MAX. UNIT CONDITIONS. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 200 85 20 7 8 8 20 12 500 10 10 200 0.5 1.5 100 10 100 V V nA µA µA mA Ω Ω mS pF pF pF ns ns ns ns V DD ≈ 25V, I D=250mA V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=200 V, V GS=0 V DS=160 V, V GS=0V, T=125°C (2) V DS=25 V, V GS=5V V GS=5V,I D=250mA V GS=3V, I D=125mA V DS=25V,I D=250mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2...