ZVP0535A

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=100Ω ZVP0535A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE -350 -50 -480 ± 20 UNIT V mA mA V mW °C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 40 120 20 5 10 15 15 20 -120 100 -350 -1.5 -4.5 100 -20 -2 V V nA mA mA Ω µA ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=-350 V, VGS=0 VDS=-280 V, VGS=0V, T=125°C(2) VDS=-25 V, VGS=-10V VGS=-10V,ID=-50mA VDS=-25V,ID=-50mA mS pF pF pF ns ns ns ns VDS=-25 V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-50mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% 3-409 ( 2 ZVP0535A TYPICAL CHARACTERISTICS -700 -600 VGS= -10V -8V -160 -140 VGS= -10...