ZVP2120G

SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VDS * RDS(on)=25Ω PARTMARKING DETAIL – COMPLEMENTARY TYPE – 7 ZVP2120G D ZVP2120 ZVN2120G G S D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -200 -200 -1.2 ± 20 UNIT V mA A V W °C 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss 50 100 25 7 7 15 12 15 -300 25 -200 -1.5 -3.5 -20 -10 -100 V V nA µA µA Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C (2) mA Ω VDS=-25 V, VGS=-10V VGS=-10V, ID=-150mA VDS=-25V, ID=-150mA mS pF pF pF ns ns ns ns VDS=-25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss td(on) tr td(off) tf VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching t...