ZVP3306F

SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=14Ω PARTMARKING DETAIL – ML COMPLEMENTARY TYPE – ZVN3306F ZVP3306F D S G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -60 -90 -1.6 ± 20 SOT23 UNIT V mA A V mW °C 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss 60 50 25 8 8 8 8 8 -400 14 -60 -1.5 -3.5 20 -0.5 -50 V V nA µA µA Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=-60 V, VGS=0V VDS=-48 V, VGS=0V, T=125°C(2) VDS=-18 V, VGS=-10V VGS=-10V, ID=-200mA VDS=-18V, ID=-200mA mA Ω mS pF pF pF ns ns ns ns VDS=-18V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss td(on) tr td(off) tf VDD ≈ -18V, ID=-200mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured ...