Document
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 - OCTOBER 1995 FEATURES * 240 Volt VDS * RDS(on)= 8.8Ω typical at VGS=-3.5V * Low threshold and Fast switching APPLICATIONS * Electronic hook switches * Telecoms and Battery powered equipment COMPLEMENTARY TYPE PARTMARKING DETAIL ZVN4424G ZVP4424
ZVP4424G
D
S D G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -240 -480 -1.0
± 40
UNIT V mA A V W °C
2.5 -55 to +150
3 - 438
ZVP4424G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Resistance Forward Transconductance (1) (2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 125 100 18 5 8 8 26 20 200 25 15 15 15 40 30 -0.75 -1.0 7.1 8.8 9 11 -240 -0.7 -1.4 -2.0 100 -10 -100 TYP MAX. UNIT V V nA
µA µA
CONDITIONS. ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS=± 40V, VDS=0V VDS=-240V, VGS=0V VDS=-190V, VGS=0V, T=125°C VDS=-10V, VGS=-10V VGS=-10V, ID=-200mA VGS=-3.5V, ID=-100mA VDS=-10V,ID=-0.2A
A
Ω Ω
mS pF pF pF ns ns ns ns
VDS=-25V, VGS=0V, f=1MHz
VDD ≈−50V, ID =-0.25A, VGEN=-10V
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device
TYPICAL CHARACTERISTICS
-Gate Source Voltage (Volts)
300
Note:VGS=0V
0 -2 -4 -6 -8 -10 -12 -14 -16 0
C-Capacitance (pF)
250
200
150
Ciss
100
Coss
VDS= -20V -50V -100V Note:ID=- 0.25A
1 2 3 4 5
50
0 -0.01 -1
Crss
-10 -100
5 /
VDS-Drain Source Voltage (Volts)
V
Q-Gate Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3 - 439
ZVP4424G
TYPICAL CHARACTERISTICS
-1.2
I - Drain Current (Amps)
I - Drain Current (Amps)
-1.0
300µs Pulsed T est VGS=-10V -5V -4V
-1.2
-1.0
-0.8
-0.8
-0.6
-0.6
-0.4
-3V -2.5V -2V
-0.4
VDS=-10V 300µs Pulsed T est
-0.2
-0.2
0 0 -2 -4 -6 -8 -10
0 0 -2 -4 -6 -8 -10
VDS - Drain Source Voltage (Volts)
VGS - Gate Source Voltage (Volts)
Saturation Characteristics
400 400
Transfer Characteristics
g -Transconductance (mS)
g -Transconductance (mS)
300
300
200
300µs Pulsed T est VDS=-10V
200
300µs Pulsed T est VDS=-10V
100
100
IB
IB
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
0
0
-2
-4
-6
ID- Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
RDS(on)-Drain S.