ZX5T849G

ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 30V : RSAT = 28m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES Extemely low equivalent on-resistance; RSAT = 28m at 6.5A 7 amps continuous current Up to 20 amps peak current Very low saturation voltages Excellent hFE characteristics up to 20 amps SOT223 APPLICATIONS DC - DC converters MOSFET gate drivers Charging circuits Power switches Motor control ORDERING INFORMATION DEVICE ZX5T849GTA ZX5T849GTC REEL SIZE 7” 13" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1000 units 4000 units PINOUT DEVICE MARKING X5T849 TOP VIEW ISSUE 1 - NOVEMBER 2003 1 SEMICONDUCTORS ZX5T849G ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT 80 30 7 7 20 3.0 24 1.6 12.8 -55 to +150 UNIT V V V A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R ⍜ JA R ⍜ JA VALUE 42 78 UNIT °C/W °C/W NOTES (a) For a device surface mo...