ZXM61N03F

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.22⍀; ID=1.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package SOT23 APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXM61N03FTA ZXM61N03FTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL Top View 3000 units 10000 units DEVICE MARKING N03 PROVISIONAL ISSUE A - MAY 1999 65 ZXM61N03F ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS=10V; T A=25°C)(b) (V GS=10V; T A=70°C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at T A=25°C (a) Linear Derating Factor Power Dissipation at T A=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j:T stg LIMIT 30 ±20 1.4 1.1 7.3 0.8 7.3 625 5 806 6.4 -55 to +150 UNIT V V A A A A mW mW/°C mW mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θJA R θJA VALUE 200 155 UNIT °C/W °C/W NOTES (a) For a devi...