ZXM61P03F

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35⍀; ID=-1.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package SOT23 APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXM61P03FTA ZXM61P03FTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL Top View 3000 units 10000 units DEVICE MARKING P03 PROVISIONAL ISSUE A - JULY 1999 81 ZXM61P03F ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS=-10V; T A=25°C)(b) (V GS=-10V; T A=70°C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A=25°C (a) Linear Derating Factor Power Dissipation at T A=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j:T stg LIMIT -30 ± 20 -1.1 -0.9 -4.3 -0.88 -4.3 625 5 806 6.4 -55 to +150 UNIT V V A A A A mW mW/°C mW mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θJA R θJA VALUE 200 155 UNIT °C/W °C/W NOTE...