ZXM64N035G

ZXM64N035G 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V: RDS(on) = 0.050 : ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · Low on-resistance · Fast switching speed · Low threshold · Low gate drive · SOT223 package APPLICATIONS · 50W Class D Audio Output Stage · Motor Control ORDERING INFORMATION DEVICE ZXM64N035GTA ZXM64N035GTC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING · ZXM6 4N035 Top View PROVISIONAL ISSUE A - JANUARY 2002 1 ZXM64N035G ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS =10V; T A =25°C)(b) (V GS =10V; T A =70°C)(b) (V GS =10V; T A =25°C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 35 Ϯ 20 6.7 5.4 4.8 30 2.4 30 2.0 16 3.9 31 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 62.5 32 UNIT °C/W °C/W NOTES (a) For a devi...