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ZXM64P035L3 Dataheets PDF



Part Number ZXM64P035L3
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description 35V P-CHANNEL MOSFET
Datasheet ZXM64P035L3 DatasheetZXM64P035L3 Datasheet (PDF)

ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · Low on-resistance · Fast switching speed · Low threshold · Low gate drive · TO220 package APPLICATIONS · 100W Cla.

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ZXM64P035L3 35V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES · Low on-resistance · Fast switching speed · Low threshold · Low gate drive · TO220 package APPLICATIONS · 100W Class D Audio Output Stage · Motor Control ORDERING INFORMATION DEVICE ZXM64P035L3 MULTIPLES 1000 DEVICE MARKING · ZXM6 4P035 Front View PROVISIONAL ISSUE A - JANUARY 2002 1 ZXM64P035L3 ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = -10V; T C =25°C)(a) (V GS = -10V; T A =25°C)(b) Pulsed Drain Current (b) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(b) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j :T stg LIMIT -35 Ϯ 20 -12 -3.3 -19 -2.3 -19 20 160 1.5 12 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Case (a) Junction to Ambient (b) SYMBOL R θ JC R θ JA VALUE 6.25 83.3 UNIT °C/W °C/W PROVISIONAL ISSUE A - JANUARY 2002 2 ZXM64P035L3 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage V (BR)DSS -35 I DSS I GSS V GS(th) -1.0 0.075 0.105 2.3 -1 Ϯ 100 V ␮A nA V ⍀ ⍀ S I D =-250 µ A, V GS =0V V DS =-35V, V GS =0V V GS = Ϯ 20V, V DS =0V I =-250 ␮ A, V DS = V GS D V GS =-10V, I D =-2.4A V GS =-4.5V, I D =-1.2A V DS =-10V,I D =-1.2A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 30.2 27.8 t d(on) tr t d(off) tf Qg Q gs Q gd 4.4 6.2 40 29.2 C iss C oss C rss 825 250 80 g fs pF pF pF V DS =-25V, V GS =0V, f=1MHz ns ns ns ns 46 9 11.5 nC nC nC V DS =-24V,V GS =-10V, I D =-2.4A V DD =-15V, I D =-2.4A R G =6.0 ⍀ , V GS =-10V -0.95 V ns nC T J =25 Њ C, I S =-2.4A, V GS =0V T J =25 Њ C, I F =-2.4A, di/dt= 100A/ ␮ s NOTES (1) Measured under pulsed conditions. Width=300␮s. Duty cycle Յ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JANUARY 2002 3 ZXM64P035L3 Package Outline Package Dimensions DIM Millimetres Min A b b1 c1 D E.


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