ZXM66P02N8

ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY (BR)DSS=-20V; RDS(ON)=0.025 D=-8.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package SO8 APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control 2 1 S S D D D ORDERING INFORMATION DEVICE ZXM66P02N8TA ZXM66P02N8TC REEL SIZE 7” 7” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units S 3 2500 units DEVICE MARKING ZXM6 6P02 PROVISIONAL ISSUE A - MAY 2001 1 4 Top View 5 6 7 8 ZXM66P02N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current V GS =-4.5V; T A =25°C (b) V GS =-4.5V; T A =70°C (b) V GS =-4.5V; T A =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -20 ±12 -8.0 -6.5 -6.4 -28 -4.15 -28 1.56 12.5 2.5 20 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambie...