30V P-CHANNEL MOSFET
ZXM66P03N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY (BR)DSS=-30V; RDS(ON)=0.025
D=-7.9A
DESCRIPTION This new gen...
Description
ZXM66P03N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY (BR)DSS=-30V; RDS(ON)=0.025
D=-7.9A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
SO8
APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control
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S S D D D
ORDERING INFORMATION
DEVICE ZXM66P03N8TA ZXM66P03N8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
S
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Top View
DEVICE MARKING ZXM6 6N03
PROVISIONAL ISSUE A - MAY 2001
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ZXM66P03N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current V GS =-10V; T A =25°C(b) V GS =-10V; T A =70°C(b) V GS =-10V; T A =25°C(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -30 ±20 -7.9 -6.3 -6.25 -28 -4.1 -28 1.56 12.5 2.5 20 -55 to +150 UNIT V V A
I DM IS I SM PD PD T j :T stg
A A A W mW/°C W mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) S...
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