ZXMC3A16DN8

ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS Motor Drive LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMC3A16DN8TA 7’‘ 12mm ZXMC3A16DN8TC 13’‘ 12mm QUANTITY PER REEL 500 units 2500 units DEVICE MARKING ZXMC 3A16 Q1 = N-CHANNEL SO8 Q2 = P-CHANNEL PINOUT Top view ISSUE 1 - OCTOBER 2005 1 ZXMC3A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@VGS=10V; @VGS=10V; @VGS=10V; TA=25ЊC TA=70ЊC TA=25ЊC (b)(d) (b)(d) (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Power Dissipation at TA=25°C (a)(e) Linear Derating Factor Power Dissipation at TA=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL N-Channel P-Channel VDSS VGS ID 30 -30 Ϯ20 Ϯ20 6.4 -5.4 5.1 -4.3 4.9 -4.1 IDM 30 -25 IS 3.4 -3.2 ISM 30 -25 PD 1.25 10 PD...