ZXMD63C03X

ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135⍀; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185⍀; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package N-CHANNEL P-CHANNEL APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMD63C03XTA ZXMD63C03XTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 12mm embossed 12mm embossed QUANTITY PER REEL 1000 units 4000 units Top View DEVICE MARKING ZXM63C03 PROVISIONAL ISSUE A - JUNE 1999 13 ZXMD63C03X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V GS=4.5V; T A=25°C)(b)(d) (V GS=4.5V; T A=70°C)(b)(d) Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T A=25°C (a)(d) Linear Derating Factor Power Dissipation at T A=25°C (a)(e) Linear Derating Factor Power Dissipation at T A=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD PD T j:T stg 2.3 1.8 14 1.5 14 0.87 6.9 1.04 8.3 1....