ZXMD65P02N8

ZXMD65P02N8 DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY (BR)DSS=-20V; RDS(ON)=0.050⍀ D=-5.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package SO8 APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMD65P02N8TA ZXMD65P02N8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units Top View DEVICE MARKING ZXMD 65P02 PROVISIONAL ISSUE A - MAY 2001 33 ZXMD65P02N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current V GS =-4.5V; T A =25°C (b)(d) V GS =-4.5V; T A =70°C (b)(d) V GS =-4.5V; T A =25°C (a)(d) Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (a)(e) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor SYMBOL V DSS V GS ID LIMIT -20 ±12 -5.1 -4.1 -4.0 -18 -3.1 -18 1.25 10 1.75 14 2.0 16 UNIT V V A I DM IS I SM PD PD PD A A A W mW/°C W mW/°C W mW/°C THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(d) Ju...