ZXMHC3A01T8

ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SM8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Single SM-8 surface mount package D1, D2 D3, D4 G1 S1 S4 G4 APPLICATIONS Single phase DC fan motor drive G2 S2 S3 G3 ORDERING INFORMATION DEVICE ZXMHC3A01T8TA ZXMHC3A01T8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1,000 units 4,000 units PINOUT DEVICE MARKING ZXMH C3A01 Top View DRAFT ISSUE E - APRIL 2004 1 SEMICONDUCTORS ZXMHC3A01T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage SYMBOL V DSS V GS N-Channel 30 ±20 3.1 2.5 2.7 I DM IS I SM PD PD T j , T stg 14.5 2.3 14.5 1.3 10.4 1.7 13.6 -55 to +150 P-channel -30 ±20 -2.3 -1.8 -2.0 -10.8 -2.2 -10.8 UNIT V V A A A A A A W mW/°C W mW/°C °C Continuous drain current (VGS = 10V; T A =25°C)(b)(d) I D (VGS = 10V; TA =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at T A =25°C (a) (d) Linear derating factor Power dissipation at T A =25°C Line...