ZXMN2A02X8

ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.02⍀ D=7.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES MSOP8 Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMN2A02X8TA ZXMN2A02X8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units Top View DEVICE MARKING ZXMN 2A02 PROVISIONAL ISSUE A - SEPTEMBER 2001 1 ZXMN2A02X8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 20 12 7.6 6.1 6 27 3.1 27 1.1 8.8 1.8 14.4 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 113 70 UNIT °C...