DUAL 20V N-CHANNEL MOSFET
ZXMN2A04DN8
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=20V; RDS(ON)=0.030⍀ ID=6.8A
DESCRIPTION This ne...
Description
ZXMN2A04DN8
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=20V; RDS(ON)=0.030⍀ ID=6.8A
DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES
SO8
Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
APPLICATIONS
DC - DC Converters Power Management Functions Disconnect switches Motor control
ORDERING INFORMATION
DEVICE ZXMN2A04DN8TA ZXMN2A04DN8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
Top View
DEVICE MARKING
ZXMN
2A04D
PROVISIONAL ISSUE A - AUGUST 2001 1
ZXMN2A04DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL V D SS VGS LIMIT 20 Ϯ12 6.8 5.4 5.2 23 12 23 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A
Continuous Drain Current (V GS =10V; T A =25°C)(b)(d) I D (V GS =10V; T A =70°C)(b)(d) (V GS =10V; T A =25°C)(a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (a)(e) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range I DM IS I SM PD PD PD T j :T stg
A A A W mW/°C W mW/°C W mW/°C °C
THERMAL RESISTANC...
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