ZXMN2A14F

ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V : RDS(on)=0.06 ; ID=4.1A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package SOT23 APPLICATIONS DC-DC Converters Power Management functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMN2A14FTA ZXMN2A14FTC REEL SIZE 7” 13” TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units PINOUT DEVICE MARKING 214 ISSUE 2 - SEPTEMBER 2003 1 SEMICONDUCTORS ZXMN2A14F ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V GS =4.5V; T A =25°C (b) @ V GS =4.5V; T A =70°C (b) @ V GS =4.5V; T A =25°C (a) Pulsed Drain Current (c) SYMBOL V DSS V GS ID LIMIT 20 Ϯ12 4.1 3.3 3.4 UNIT V V A A A A A A W mW/°C W mW/°C °C I DM IS I SM PD PD T j , T stg 19 1.7 19 1 8 1.5 12 -55 to +150 Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C Linear Derating Factor Operating and Storage Temperature Range (b) THERMAL RESISTANCE PARAMETER Junction to Ambient (a) SYMBOL R ⍜ JA R ⍜ JA VALUE 125 82 UNIT °C/W °C/W Junction to Ambient ...