ZXMN3A04DN8

ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025⍀ ID=7.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMN3A04DN8TA ZXMN3A04DN8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units Top View DEVICE MARKING ZXMN 3A04D PROVISIONAL ISSUE A - AUGUST 2001 1 ZXMN3A04DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage SYMBOL V D SS VGS LIMIT 30 Ϯ 20 7.6 6.0 5.8 25 2.5 25 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A Continuous Drain Current (V GS =10V; T A =25°C)(b)(d) I D (V GS =10V; T A =70°C)(b)(d) (V GS =10V; T A =25°C)(a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (a)(e) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range I DM IS I SM PD PD PD T j :T stg A A A W mW/°C W mW/°C W mW/°C °C THERMAL RESISTA...