ZXMN6A09G

ZXMN6A09G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 60V; RDS(ON)= 0.045 DESCRIPTION ID= 5.1A This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package SOT223 APPLICATIONS DC - DC Converters Power Management Functions Relay and Solenoid driving Motor control ORDERING INFORMATION DEVICE ZXMN6A09GTA ZXMN6A09GTC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING ZXMN 6A09 Top View PROVISIONAL ISSUE D - SEPTEMBER 2003 1 SEMICONDUCTORS ZXMN6A09G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; T A =25°C) (b) (V GS =10V; T A =70°C) (b) (V GS =10V; T A =25°C) (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 60 Ϯ20 6.9 5.6 5.0 30.6 3.5 30.6 2.0 16 3.9 31 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient (a)(d) (b)...