ZXMN6A11G

ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 60V; RDS(ON)= 0.14 DESCRIPTION ID= 3.8A This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT223 package SOT223 APPLICATIONS DC - DC Converters Power Management Functions Relay and Solenoid driving Motor control ORDERING INFORMATION DEVICE ZXMN6A11GFTA ZXMN6A11GFTC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units DEVICE MARKING ZXMN 6A11 Top View ISSUE 1 - MARCH 2002 1 ZXMN6A11G ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current V GS =10V; T A =25°C(b) V GS =10V; T A =70°C(b) V GS =10V; T A =25°C(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25°C (a) Linear Derating Factor Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT 60 20 3.8 3.0 2.7 10 5 10 2.0 16 3.9 31 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with ...