Dual P-Channel MOSFET
ZXMP3A16DN8
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION...
Description
ZXMP3A16DN8
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
SO8
APPLICATIONS
Motor Drive LCD backlighting
ORDERING INFORMATION
DEVICE ZXMP3A16DN8TA ZXMP3A16DN8TC REEL 7’‘ 13’‘ TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units
PINOUT
DEVICE MARKING
ZXMP 3A16
Top view
PROVISIONAL ISSUE C - JULY 2004 1
ZXMP3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 Њ C (b)(d) @V GS =10V; T A =70 Њ C (b)(d) @V GS =10V; T A =25 Њ C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25°C (a)(d) Linear Derating Factor Power Dissipation at T A =25°C (a)(e) Linear Derating Factor Power Dissipation at T A =25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range
(b)
SYMBOL V DSS V GS ID
LIMIT -30 Ϯ20 -5.5 -4.4 -4.2 -20 -3.2 -20 1.25 10 1.8 14 2.1 17 -55 to +150
UNIT V V A A A A A A W mW/°C W mW/°C W mW/°C °C
I DM IS I SM PD PD PD T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambie...
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