ZXT10P40DE6

ZXT10P40DE6 SuperSOT™ 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 105m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 3A IC=2.0A Continuous Collector Current SOT23-6 package SOT23-6 APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control ORDERING INFORMATION DEVICE ZXT10P40DE6TA ZXT10P40DE6TC DEVICE MARKING 720 REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units C C B Top View C C E 10000 units ISSUE 1 - SEPTEMBER 2000 1 ZXT10P40DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT -40 -40 -5 -4 -2 -500 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V V A A mA W mW/°C W mW/°C °C PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 113 73 UNIT °C/W °C/W NOTES (a) F...