ZXT12P12DX
SuperSOT4™ DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A
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ZXT12P12DX
SuperSOT4™ DUAL 12V
PNP SILICON LOW SATURATION SWITCHING
TRANSISTOR
SUMMARY VCEO=-12V; RSAT = 47m ; IC= -3A
DESCRIPTION This new 4th generation ultra low saturation
transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
MSOP8
FEATURES Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 12A IC=3A Continuous Collector Current MSOP8 package
C1
C2
B1
B2
APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control
7
B1
E1
E2
ORDERING INFORMATION DEVICE ZXT12P12DXTA ZXT12P12DXTC DEVICE MARKING T12P12DX REEL SIZE (inches) 7 13 TAPE WIDTH (mm)
12mm embossed 12mm embossed
1
E1
C1 C1 C2 C2
QUANTITY PER REEL 1000 units
E2 B2
3
2
Top View
4000 units
ISSUE 1 - MARCH 2000 1
4
5
6
8
ZXT12P12DX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Power Dissipation at TA=25°C (a)(e) Linear Derating Factor Power Dissipation at TA=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT -20 -12 -7.5 -15 -3 -500 0.87 6.9 1.04 8.3 1.25 10 -55 to +150 UNIT V V V A A mA W mW/°C W mW/°C W mW/°C °C
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