ZXT13N20DE6
SuperSOT4™ 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=20V; RSAT = 38m ; IC= 4.5A
DESCR...
ZXT13N20DE6
SuperSOT4™ 20V
NPN SILICON LOW SATURATION SWITCHING
TRANSISTOR
SUMMARY VCEO=20V; RSAT = 38m ; IC= 4.5A
DESCRIPTION This new 4th generation ultra low saturation
transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 15A IC=4.5A Continuous Collector Current SOT23-6 package
SOT23-6
APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control
ORDERING INFORMATION DEVICE ZXT13N20DE6TA ZXT13N20DE6TC DEVICE MARKING N20D REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units
C C B
Top View
C C E
10000 units
ISSUE 1 - DECEMBER 1999 1
ZXT13N20DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT 50 20 7.5 15 4.5 500 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V V A A mA W mW/°C W mW/°C °C
PD
T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R θ JA R θ JA VALUE 113 73 UNIT °C/W °C/W
N...