ZXTS1000E6

ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package. SOT23-6 FEATURES Low Saturation Transistor High Gain - 300 minimum Low VF, fast switching Schottky Mobile telecomms, PCMCIA & SCSI DC-DC Conversion APPLICATIONS ORDERING INFORMATION DEVICE ZXTS1000E6TA ZXTS1000E6TC DEVICE MARKING 1000 REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units 10000 units Top View ISSUE 1 - NOVEMBER 2000 1 ZXTS1000E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Transistor Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Schottky Diode Continuous Reverse Voltage Forward Current Non Repetitive Forward Current t ≤100 µs t ≤ 10ms Package Power Dissipation at T amb =25°C single die “on” both die “on” Storage Temperature Range Junction Temperature PD T stg Tj 0.725 0.885 -55 to +150 125 W W °C °C VR IF I FSM 40 0.5 6.75 3 V A A A V CBO V CEO V EBO IC -12 -12 -5 -1.25 V V V A SYMBOL VALUE UNIT THERMAL RESISTANCE PARAMETER Junction to Ambient (a) single die “on” both die “on” SYMBOL R θ JA R θ JA VALUE 138 113 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions ISSUE 1 - NOVEMBER 2000 2 ZXTS1000E6 TRANSIS...