High Power GaAs FET
MSC8001
HIGH POWER GaAs FET
FEATURES INCLUDE:
•
27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimize...
Description
MSC8001
HIGH POWER GaAs FET
FEATURES INCLUDE:
27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Chip Devices are Selected from Standard Military Grade Wafers Hermetic Metal/Ceramic Package Suitable for Hi-Rel Applications Custom Electrical Test and Screening Available for Source Control Drawings
FET PACKAGE TYPE 30
TRANS1.SYM
RF ELECTRICAL SPECIFICATIONS
SYMBOL
MAG PMAG
FREQUENCY MAX AVAILABLE GAIN
TA = 25 C
O
TEST CONDITIONS
= 8.0 GHz
MINIMUM TYPICAL MAXIMUM
8.5 24
UNITS
dB dBm
OUTPUT POWER AT MAG TUNING FREQUENCY
= 8.0 GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
...
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