N-Channel Power Mosfets
N-CHANNEL POWER MOSFET
SSH7N90A
FEATURES
BVDSS = 900V • • • • • • • Avalanche Rugged Technology Rugged Gate Oxide Tech...
Description
N-CHANNEL POWER MOSFET
SSH7N90A
FEATURES
BVDSS = 900V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 25µA (Max.) @ VDS = 900V Lower RDS(ON): 1.247Ω (Typ.)
1 2 3
RDS(ON) = 1.8Ω ID = 7A
TO-3P
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC = 25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds y x x z x Value 900 7 4.4 28 ±30 778 7 24 1.5 240 1.92 −55 to +150
1. Gate 2. Drain 3. Source
Units V A A V mJ A mJ V/ns W W/°C
°C 300
THERMAL RESISTANCE
Symbol RθJC RθCS RθJA Characteristics Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. − 0.24 − Max. 0.52 − 40 °C/W Units
REV. B
1
1999 Fairchild Semiconductor Corporation
SSH7N90A
N-CHANNEL POWER MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage, ...
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