CMOS FIFO memories
3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO™ 131,072 x 18 262,144 x 18
.EATURES:
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IDT72V295 IDT72V2105
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Description
3.3 VOLT HIGH DENSITY CMOS SUPERSYNC FIFO™ 131,072 x 18 262,144 x 18
.EATURES:
IDT72V295 IDT72V2105
Choose among the following memory organizations: IDT72V295 131,072 x 18 IDT72V2105 262,144 x 18 Pin-compatible with the IDT72V255/72V265 and the IDT72V275/ 72V285 SuperSync FIFOs 10ns read/write cycle time (6.5ns access time) Fixed, low first word data latency time 5V input tolerant Auto power down minimizes standby power consumption Master Reset clears entire FIFO Partial Reset clears data, but retains programmable settings Retransmit operation with fixed, low first word data latency time Empty, Full and Half-Full flags signal FIFO status Programmable Almost-Empty and Almost-Full flags, each flag can default to one of two preselected offsets Program partial flags by either serial or parallel means
Select IDT Standard timing (using EF and FF flags) or First Word Fall Through timing (using OR and IR flags) Output enable puts data outputs into high impedance state Easily expandable in depth and width Independent Read and Write clocks (permit reading and writing simultaneously) Available in the 64-pin Thin Quad Flat Pack (TQFP) High-performance submicron CMOS technology
DESCRIPTION:
The IDT72V295/72V2105 are exceptionally deep, high speed, CMOS First-In-First-Out (FIFO) memories with clocked read and write controls. These FIFOs offer numerous improvements over previous SuperSync FIFOs, including the following: The limitation of the fr...
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